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功率场效应晶体管:

180,339 个筛选结果
功率场效应晶体管(VF)又称VMOS场效应管。在实际应用中,它有着比晶体管和MOS场效应管更好的特性。
IGBT (25,418)
型号
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配置 (50)
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最小漏源击穿电压 (50)
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最大漏极电流 (ID) (50)
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最大漏源导通电阻 (50)
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制造商 (50)
元件数量 (9)
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端子数量 (40)
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极性/信道类型 (5)
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型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
最大关闭时间(toff)
最大开启时间(吨)
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
mfrid
零件包装代码
包装说明
针数
是否符合REACH标准
ECCN代码
YTEOL
Source Content uid
Country Of Origin
制造商包装代码
HTS代码
Date Of Intro
IRFR1N60ATRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 TO-252AA SMALL OUTLINE, R-PSSO-G2 3 not_compliant EAR99 6.3
IRF640NSTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 18 A 150 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 247 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 72 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.97 IRF640NSTRLPBF Mainland China
IRFR420ATRPBF
Vishay Intertechnologies
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 3.3 A 3 Ω 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 83 W 10 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 compliant EAR99 6.3
IRLR2908TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 80 V 1 30 A 28 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 250 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 120 W 150 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 5.85 IRLR2908TRPBF Mainland China
NTD20P06LT4G
onsemi
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 15.5 A 150 mΩ 304 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 54 W 50 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE 2260 DPAK (SINGLE GAUGE) TO-252 DPAK-3 3 not_compliant EAR99 5.4 NTD20P06LT4G Mainland China, Malaysia, Vietnam 369C
HUF75344G3
onsemi
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 75 A 8 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 285 W SWITCHING SILICON TO-247 R-PSFM-T3 e3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - annealed THROUGH-HOLE SINGLE 2260 TO-247, 3 PIN not_compliant EAR99 5.1 HUF75344G3 Mainland China 340CK
IRFS4310TRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 75 A 7 mΩ 980 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 W 550 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 5.9 IRFS4310TRLPBF
IRFS3607TRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 75 V 1 80 A 9 mΩ 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 140 W 310 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 compliant EAR99 5.9 IRFS3607TRLPBF
IRLR120NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 10 A 225 mΩ AVALANCHE RATED 85 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W 35 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 5.6 IRLR120NTRPBF Mainland China
IRFS9N60APBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 9.2 A 750 mΩ 290 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 37 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 SMALL OUTLINE, R-PSSO-G2 3 compliant EAR99 6.25
IRFS4310ZTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 120 A 6 mΩ 130 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 W 560 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 compliant EAR99 5.9 IRFS4310ZTRLPBF
IRFR15N20DTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 17 A 165 mΩ 260 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 140 W 68 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 5.97 IRFR15N20DTRPBF Mainland China
IRF3205STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 75 A 8 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 264 mJ 211 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 390 A SWITCHING SILICON 115 ns 115 ns TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 D2PAK-3/2 not_compliant EAR99 5.6 IRF3205STRLPBF Mainland China
FDS8896
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 30 V 1 15 A 6 mΩ 196 mJ 300 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W 2.5 W 110 A SWITCHING SILICON 126 ns 68 ns R-PDSO-G8 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL 2260 SO-8 compliant EAR99 5.3 FDS8896 Mainland China 751EB 8541.29.00.95
IRFZ24NPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 17 A 70 mΩ AVALANCHE RATED 71 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 45 W 68 A SWITCHING SILICON TO-220AB R-PSFM-T3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE 2065 compliant EAR99 5 IRFZ24NPBF
FQD12N20LTM
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 9 A 320 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 55 W 36 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2260 DPAK-3 not_compliant EAR99 5.97 FQD12N20LTM Mainland China 369AS
IRF644SPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 250 V 1 14 A 280 mΩ AVALANCHE RATED 550 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 56 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 D2PAK SMALL OUTLINE, R-PSSO-G2 4 not_compliant EAR99 5.97
NTHL080N120SC1A
onsemi
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 1.2 kV 1 31 A 110 mΩ 171 mJ 6.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 178 W 132 A SWITCHING SILICON CARBIDE TO-247 R-PSFM-T3 e3 175 °C -55 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - annealed THROUGH-HOLE SINGLE 2260 not_compliant EAR99 6.5 NTHL080N120SC1A 340CX 2020-03-09
IRF3710STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 57 A 23 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 280 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 180 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.85 IRF3710STRLPBF Mainland China
HUF75329D3ST
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 20 A 26 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 128 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE 2260 not_compliant EAR99 5.55 HUF75329D3ST Mainland China 369AS
型号 Most Relevant Technical Compliance Operating Conditions Physical Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
最大关闭时间(toff)
最大开启时间(吨)
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
mfrid
零件包装代码
包装说明
针数
是否符合REACH标准
ECCN代码
YTEOL
Source Content uid
Country Of Origin
制造商包装代码
HTS代码
Date Of Intro
IRFR1N60ATRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 TO-252AA SMALL OUTLINE, R-PSSO-G2 3 not_compliant EAR99 6.3
IRF640NSTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 18 A 150 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 247 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 72 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.97 IRF640NSTRLPBF Mainland China
IRFR420ATRPBF
Vishay Intertechnologies
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 3.3 A 3 Ω 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 83 W 10 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 compliant EAR99 6.3
IRLR2908TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 80 V 1 30 A 28 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 250 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 120 W 150 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 5.85 IRLR2908TRPBF Mainland China
NTD20P06LT4G
onsemi
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 15.5 A 150 mΩ 304 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 54 W 50 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE 2260 DPAK (SINGLE GAUGE) TO-252 DPAK-3 3 not_compliant EAR99 5.4 NTD20P06LT4G Mainland China, Malaysia, Vietnam 369C
HUF75344G3
onsemi
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 75 A 8 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 285 W SWITCHING SILICON TO-247 R-PSFM-T3 e3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - annealed THROUGH-HOLE SINGLE 2260 TO-247, 3 PIN not_compliant EAR99 5.1 HUF75344G3 Mainland China 340CK
IRFS4310TRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 75 A 7 mΩ 980 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 W 550 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 5.9 IRFS4310TRLPBF
IRFS3607TRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 75 V 1 80 A 9 mΩ 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 140 W 310 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 compliant EAR99 5.9 IRFS3607TRLPBF
IRLR120NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 10 A 225 mΩ AVALANCHE RATED 85 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W 35 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 5.6 IRLR120NTRPBF Mainland China
IRFS9N60APBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 9.2 A 750 mΩ 290 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 37 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 SMALL OUTLINE, R-PSSO-G2 3 compliant EAR99 6.25
IRFS4310ZTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 120 A 6 mΩ 130 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 W 560 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 compliant EAR99 5.9 IRFS4310ZTRLPBF
IRFR15N20DTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 17 A 165 mΩ 260 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 140 W 68 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 5.97 IRFR15N20DTRPBF Mainland China
IRF3205STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 75 A 8 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 264 mJ 211 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 390 A SWITCHING SILICON 115 ns 115 ns TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 D2PAK-3/2 not_compliant EAR99 5.6 IRF3205STRLPBF Mainland China
FDS8896
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 30 V 1 15 A 6 mΩ 196 mJ 300 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W 2.5 W 110 A SWITCHING SILICON 126 ns 68 ns R-PDSO-G8 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL 2260 SO-8 compliant EAR99 5.3 FDS8896 Mainland China 751EB 8541.29.00.95
IRFZ24NPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 17 A 70 mΩ AVALANCHE RATED 71 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 45 W 68 A SWITCHING SILICON TO-220AB R-PSFM-T3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE 2065 compliant EAR99 5 IRFZ24NPBF
FQD12N20LTM
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 9 A 320 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 55 W 36 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2260 DPAK-3 not_compliant EAR99 5.97 FQD12N20LTM Mainland China 369AS
IRF644SPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 250 V 1 14 A 280 mΩ AVALANCHE RATED 550 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 56 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 D2PAK SMALL OUTLINE, R-PSSO-G2 4 not_compliant EAR99 5.97
NTHL080N120SC1A
onsemi
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 1.2 kV 1 31 A 110 mΩ 171 mJ 6.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 178 W 132 A SWITCHING SILICON CARBIDE TO-247 R-PSFM-T3 e3 175 °C -55 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - annealed THROUGH-HOLE SINGLE 2260 not_compliant EAR99 6.5 NTHL080N120SC1A 340CX 2020-03-09
IRF3710STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 57 A 23 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 280 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 180 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.85 IRF3710STRLPBF Mainland China
HUF75329D3ST
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 20 A 26 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 128 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE 2260 not_compliant EAR99 5.55 HUF75329D3ST Mainland China 369AS
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