型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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最大开启时间(吨)
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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mfrid
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零件包装代码
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包装说明
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针数
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是否符合REACH标准
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ECCN代码
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YTEOL
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Source Content uid
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Country Of Origin
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制造商包装代码
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HTS代码
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Date Of Intro
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IRFR1N60ATRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 1.4 A | 7 Ω | 93 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 36 W | 5.6 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | TO-252AA | SMALL OUTLINE, R-PSSO-G2 | 3 | not_compliant | EAR99 | 6.3 | |||||||||||||
IRF640NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 150 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 247 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.97 | IRF640NSTRLPBF | Mainland China | |||||||||||||
IRFR420ATRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 3.3 A | 3 Ω | 140 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 83 W | 10 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | compliant | EAR99 | 6.3 | |||||||||||||||||
IRLR2908TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 80 V | 1 | 30 A | 28 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 120 W | 150 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.85 | IRLR2908TRPBF | Mainland China | |||||||||||||
NTD20P06LT4G
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 15.5 A | 150 mΩ | 304 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 54 W | 50 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | 2260 | DPAK (SINGLE GAUGE) TO-252 | DPAK-3 | 3 | not_compliant | EAR99 | 5.4 | NTD20P06LT4G | Mainland China, Malaysia, Vietnam | 369C | |||||||||||
HUF75344G3
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 8 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 285 W | SWITCHING | SILICON | TO-247 | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | 2260 | TO-247, 3 PIN | not_compliant | EAR99 | 5.1 | HUF75344G3 | Mainland China | 340CK | ||||||||||||||||
IRFS4310TRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 75 A | 7 mΩ | 980 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 550 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.9 | IRFS4310TRLPBF | |||||||||||||||
IRFS3607TRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 75 V | 1 | 80 A | 9 mΩ | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 310 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | compliant | EAR99 | 5.9 | IRFS3607TRLPBF | ||||||||||||||||
IRLR120NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 10 A | 225 mΩ | AVALANCHE RATED | 85 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 35 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.6 | IRLR120NTRPBF | Mainland China | |||||||||||||
IRFS9N60APBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 9.2 A | 750 mΩ | 290 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 37 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | SMALL OUTLINE, R-PSSO-G2 | 3 | compliant | EAR99 | 6.25 | |||||||||||||||
IRFS4310ZTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 120 A | 6 mΩ | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 W | 560 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | compliant | EAR99 | 5.9 | IRFS4310ZTRLPBF | ||||||||||||||||
IRFR15N20DTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 17 A | 165 mΩ | 260 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 68 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.97 | IRFR15N20DTRPBF | Mainland China | ||||||||||||||
IRF3205STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 75 A | 8 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 264 mJ | 211 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 390 A | SWITCHING | SILICON | 115 ns | 115 ns | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | D2PAK-3/2 | not_compliant | EAR99 | 5.6 | IRF3205STRLPBF | Mainland China | |||||||||
FDS8896
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 15 A | 6 mΩ | 196 mJ | 300 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | 2.5 W | 110 A | SWITCHING | SILICON | 126 ns | 68 ns | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2260 | SO-8 | compliant | EAR99 | 5.3 | FDS8896 | Mainland China | 751EB | 8541.29.00.95 | |||||||||
IRFZ24NPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 17 A | 70 mΩ | AVALANCHE RATED | 71 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 68 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | 2065 | compliant | EAR99 | 5 | IRFZ24NPBF | ||||||||||||||||||
FQD12N20LTM
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 9 A | 320 mΩ | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 55 W | 36 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2260 | DPAK-3 | not_compliant | EAR99 | 5.97 | FQD12N20LTM | Mainland China | 369AS | ||||||||||||
IRF644SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 250 V | 1 | 14 A | 280 mΩ | AVALANCHE RATED | 550 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 56 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 4 | not_compliant | EAR99 | 5.97 | ||||||||||||
NTHL080N120SC1A
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1.2 kV | 1 | 31 A | 110 mΩ | 171 mJ | 6.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 178 W | 132 A | SWITCHING | SILICON CARBIDE | TO-247 | R-PSFM-T3 | e3 | 175 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | 2260 | not_compliant | EAR99 | 6.5 | NTHL080N120SC1A | 340CX | 2020-03-09 | |||||||||||||||||
IRF3710STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 57 A | 23 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 280 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 180 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.85 | IRF3710STRLPBF | Mainland China | ||||||||||||||
HUF75329D3ST
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 20 A | 26 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 W | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | 2260 | not_compliant | EAR99 | 5.55 | HUF75329D3ST | Mainland China | 369AS |