型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 集电极-发射极最大电压 | 门极发射器阈值电压最大值 | 最大集电极电流 (IC) | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大降落时间(tf) | 最大反馈电容 (Crss) | FET 技术 | 门极-发射极最大电压 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
最大上升时间(tr)
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晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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标称断开时间 (toff) |
最大开启时间(吨)
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标称接通时间 (ton) |
VCEsat-Max
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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mfrid
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包装说明
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是否符合REACH标准
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ECCN代码
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YTEOL
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Source Content uid
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制造商包装代码
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Country Of Origin
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零件包装代码
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针数
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IGW30N65L5XKSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Active | 650 V | 85 A | N-CHANNEL | NO | SINGLE | 3 | 1 | POWER CONTROL | SILICON | 520 ns | 44 ns | TO-247 | R-PSFM-T3 | e3 | -40 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | 2065 | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | 5.35 | |||||||||||||||||||||||||||||
FGH40N60SMD
onsemi
|
查询价格和库存 |
|
Yes | Active | 600 V | 6 V | 80 A | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 | LOW CONDUCTION LOSS | 17 ns | 20 V | 349 W | 28 ns | POWER CONTROL | SILICON | 132 ns | 37 ns | TO-247AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | 2260 | ROHS COMPLIANT PACKAGE-3 | not_compliant | EAR99 | 5.25 | FGH40N60SMD | 340CK | Mainland China | |||||||||||||||||||
FGD5T120SH
onsemi
|
查询价格和库存 |
|
Yes | Active | 1.2 kV | 4.5 V | 10 A | N-CHANNEL | YES | SINGLE | 2 | 1 | 25 V | 69 W | GENERAL PURPOSE SWITCHING | SILICON | 159.6 ns | 44.8 ns | 3.6 V | TO-252AA | R-PSSO-G2 | e3 | 1 | 150 °C | -55 °C | 245 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | 2260 | DPAK-3/2 | not_compliant | EAR99 | 5.82 | FGD5T120SH | 369AS | Mainland China | ||||||||||||||||||||
ISL9V2040D3ST
onsemi
|
查询价格和库存 |
|
Yes | Active | 390 V | 2.2 V | 10 A | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 12 V | 130 W | AUTOMOTIVE IGNITION | SILICON | 6 µs | 2.78 µs | 2.3 V | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -40 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | 2260 | DPAK-3/2 | not_compliant | EAR99 | 5.4 | ISL9V2040D3ST | 369AS | Philippines | |||||||||||||||||||
ISL9V5036S3ST
onsemi
|
查询价格和库存 |
|
Yes | Active | 360 V | 2.2 V | 46 A | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 15 µs | 10 V | 250 W | 7 µs | AUTOMOTIVE IGNITION | SILICON | 30 µs | 13.6 µs | 11 µs | 2.8 µs | 1.6 V | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | AEC-Q101 | 1 | 175 °C | -40 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | 2260 | D2PAK-3 | not_compliant | EAR99 | 5.4 | ISL9V5036S3ST | 418AJ | Philippines | ||||||||||||||
IKW40N120H3FKSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Active | 1.2 kV | 80 A | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 | POWER CONTROL | SILICON | 414 ns | 78 ns | TO-247 | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | 2065 | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | 3 | IKW40N120H3FKSA1 | TO-247 | 3 | |||||||||||||||||||||||||
IXYX30N170CV1
Littelfuse Inc
|
查询价格和库存 |
|
Active | 1.7 kV | 5 V | 100 A | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 | 20 V | 937 W | POWER CONTROL | SILICON | 327 ns | 49 ns | 4 V | R-PSIP-T3 | 175 °C | -55 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | 2140 | unknown | EAR99 | 5.3 | |||||||||||||||||||||||||||||||
IRFS7434TRL7PP
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 240 A | 1 mΩ | 880 mJ | 1.06 nF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 245 W | 1.3 kA | SWITCHING | SILICON | 192 ns | 148 ns | TO-263CB | R-PSSO-G6 | e3 | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | D2PAK-7/6 | not_compliant | EAR99 | 5.6 | IRFS7434TRL7PP | |||||||||||||||||||
STGW40V60DF
STMicroelectronics
|
查询价格和库存 |
|
Yes | Active | 600 V | 7 V | 80 A | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 | 20 V | 283 W | POWER CONTROL | SILICON | 241 ns | 73 ns | 2.3 V | TO-247 | R-PSFM-T3 | e3 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) | THROUGH-HOLE | SINGLE | 2443 | compliant | EAR99 | 5.25 | STGW40V60DF | Mainland China | ||||||||||||||||||||||||
IKA06N60TXKSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 600 V | 10 A | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 | HIGH SPEED | POWER CONTROL | SILICON | 249 ns | 17 ns | TO-220AB | R-PSFM-T3 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | 2065 | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | 5.25 | IKA06N60TXKSA1 | ||||||||||||||||||||||||||||||
STGW19NC60HD
STMicroelectronics
|
查询价格和库存 |
|
Yes | Active | 600 V | 5.75 V | 42 A | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 | 20 V | 140 W | POWER CONTROL | SILICON | 272 ns | 32 ns | TO-247AC | R-PSFM-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | 2443 | TO-247, 3 PIN | compliant | EAR99 | 5.25 | STGW19NC60HD | Mainland China | TO-247AC | 3 | ||||||||||||||||||||||||
IXYH40N90C3D1
Littelfuse Inc
|
查询价格和库存 |
|
Yes | Active | 900 V | 5.5 V | 90 A | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 | 20 V | 500 W | POWER CONTROL | SILICON | 237 ns | 81 ns | 2.5 V | TO-247AD | R-PSFM-T3 | e3 | 150 °C | -55 °C | 260 | 10 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) | THROUGH-HOLE | SINGLE | 2140 | , | compliant | EAR99 | 5.35 | Mainland China, Philippines, South Korea | |||||||||||||||||||||||
STGB30H60DFB
STMicroelectronics
|
查询价格和库存 |
|
Yes | Active | 600 V | 60 A | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 1 | POWER CONTROL | SILICON | 223 ns | 51.1 ns | TO-263AB | R-PSSO-G2 | NOT SPECIFIED | NOT SPECIFIED | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 2443 | TO-263, D2PAK-3/2 | compliant | EAR99 | 5.4 | STGB30H60DFB | Mainland China | ||||||||||||||||||||||||||||||
FF450R12KE4EHOSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 1.2 kV | 520 A | N-CHANNEL | NO | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE | 7 | 2 | POWER CONTROL | SILICON | 800 ns | 325 ns | R-XUFM-X7 | UL APPROVED | -40 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | RECTANGULAR | FLANGE MOUNT | UNSPECIFIED | UPPER | 2065 | FLANGE MOUNT, R-XUFM-X7 | compliant | EAR99 | 5.35 | |||||||||||||||||||||||||||||||
FZ2400R17HP4B29BOSA2
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 1.7 kV | 2.4 kA | N-CHANNEL | NO | COMPLEX | 9 | 3 | POWER CONTROL | SILICON | 1.8 µs | 665 ns | R-XUFM-X9 | 1 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | RECTANGULAR | FLANGE MOUNT | UNSPECIFIED | UPPER | 2065 | FLANGE MOUNT, R-XUFM-X9 | not_compliant | EAR99 | 6.62 | ||||||||||||||||||||||||||||||||
FGB40T65SPD-F085
onsemi
|
查询价格和库存 |
|
Yes | Active | 650 V | 80 A | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 1 | POWER CONTROL | SILICON | 51 ns | 49 ns | TO-263AB | R-PSSO-G2 | e3 | AEC-Q101 | 1 | -55 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | 2260 | not_compliant | EAR99 | 5.82 | FGB40T65SPD-F085 | 418AJ | Mainland China | TO-263 2L (D2PAK) | ||||||||||||||||||||||||
FGH60T65SHD-F155
onsemi
|
查询价格和库存 |
|
Yes | Active | 650 V | 7.5 V | 120 A | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 | RC-IGBT | 20 V | 349 W | POWER CONTROL | SILICON | 165 ns | 85 ns | 2.1 V | TO-247 | R-PSFM-T3 | e3 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | 2260 | not_compliant | EAR99 | 5.35 | FGH60T65SHD-F155 | 340CH | Mainland China | TO-247 3L | |||||||||||||||||||||
FGH40T65SHD-F155
onsemi
|
查询价格和库存 |
|
Yes | Active | 650 V | 7.5 V | 80 A | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 | LOW CONDUCTION LOSS | 268 W | POWER CONTROL | SILICON | 85.6 ns | 51.2 ns | 2.1 V | TO-247 | R-PSFM-T3 | e3 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | 2260 | TO-247G03, 3 PIN | not_compliant | EAR99 | 5.35 | FGH40T65SHD-F155 | 340CH | Mainland China | TO-247 3L | |||||||||||||||||||||
FS25R12W1T4BOMA1
Infineon Technologies AG
|
查询价格和库存 |
|
No | Yes | Active | 1.2 kV | 45 A | N-CHANNEL | NO | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | 23 | 6 | POWER CONTROL | SILICON | 505 ns | 80 ns | R-XUFM-X23 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | RECTANGULAR | FLANGE MOUNT | UNSPECIFIED | UPPER | 2065 | MODULE-23 | compliant | EAR99 | 5.35 | FS25R12W1T4BOMA1 | MODULE | 23 | |||||||||||||||||||||||||||
FGY120T65SPD-F085
onsemi
|
查询价格和库存 |
|
Yes | Active | 650 V | 6.2 V | 240 A | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 | 20 V | 882 W | POWER CONTROL | SILICON | 247 ns | 187 ns | 1.85 V | R-PSFM-T3 | e3 | AEC-Q101 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | 2260 | not_compliant | EAR99 | 5.35 | FGY120T65SPD-F085 | 340CU | Mainland China | TO-247 3L |