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存储:

1,466,576 个筛选结果
SRAM (540,897)
闪存 (312,420)
DRAM (266,974)
EEPROM (146,536)
FIFO (71,621)
OTP ROM (39,010)
EPROM (21,844)
MASK ROM (10,109)
PROM (70)
型号 访问模式 (18)
最长访问时间 (50)
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最大时钟频率 (fCLK) (50)
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制造商 (50)
内存密度 (50)
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内存宽度 (45)
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组织 (50)
型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 刷新周期
访问模式 内存集成电路类型 其他特性 备用内存宽度 数据保留时间-最小值 耐久性 I/O 类型 I2C控制字节 交错的突发长度 混合内存类型 功能数量 端口数量 字数代码 字数 工作模式 输出特性 并行/串行 编程电压
就绪/忙碌
反向引出线
自我刷新
连续突发长度
串行总线类型
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
切换位
最长写入周期时间 (tWC)
写保护
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别
处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
Source Content uid
mfrid
零件包装代码
包装说明
针数
是否符合REACH标准
Country Of Origin
ECCN代码
HTS代码
YTEOL
Date Of Intro
93LC46BT/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 4.5 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS SERIAL 4.5 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC46BT/SN 2188 SOIC 0.150 INCH, PLASTIC, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 5.9
93LC46BT-I/ST
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm 93LC46BT-I/ST 2188 SOIC TSSOP, TSSOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC46B-I/ST
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm 93LC46B-I/ST 2188 SOIC TSSOP, TSSOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC56BT/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 2.048 kbit 16 128X16 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 128 128 words SYNCHRONOUS SERIAL 3 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC56BT/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 6.1
24LC16B-E/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 16.384 kbit 8 2KX8 5 V 400 kHz EEPROM 200 1000000 Write/Erase Cycles 1010MMMR 1 1 2000 2.048 k SYNCHRONOUS SERIAL 5 V I2C 5 µA 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 125 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 24LC16B-E/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC56B-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 2.048 kbit 16 128X16 5 V 2 MHz EEPROM 8 200 1000000 Write/Erase Cycles 1 1 128 128 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC56B-I/SN 2188 SOIC 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC56B/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 2.048 kbit 16 128X16 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 128 128 words SYNCHRONOUS SERIAL 3 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC56B/SN 2188 SOIC 0.150 INCH, PLASTIC, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 6.1
47C16-I/SN
Microchip Technology Inc
查询价格和库存
Yes Active 16.384 kbit 8 2KX8 5 V 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 2000 2.048 k SYNCHRONOUS 5.5 V 4.5 V CMOS INDUSTRIAL R-PDSO-G8 e3 3 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 47C16-I/SN 2188 SOIC-8 compliant Thailand EAR99 8542.32.00.51 24.48 2016-10-10
93LC46AT/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 8 128X8 4.5 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 128 128 words SYNCHRONOUS SERIAL 4.5 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC46AT/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC66BT/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 4.096 kbit 16 256X16 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS SERIAL 3 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC66BT/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
24LC16B-I/SNG
Microchip Technology Inc
查询价格和库存
Yes Yes Active 16.384 kbit 8 2KX8 5 V 400 kHz EEPROM 1000K ERASE/WRITE CYCLES; CAN BE ORGANIZ... more 200 1000000 Write/Erase Cycles 1010MMMR 1 2000 2.048 k SYNCHRONOUS SERIAL I2C 1 µA 3 µA 5.5 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 3 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.91 mm 24LC16B-I/SNG 2188 SOIC 0.150 INCH, ROHS COMPLIANT, PLASTIC, MS-012, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 6.2
AS4C16M16SA-6TIN
Alliance Memory Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns 166 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 25 mA 60 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 e3 3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
MR2A16ACYS35
Everspin Technologies
查询价格和库存
Yes Yes Active 4.1943 Mbit 16 256KX16 3.3 V 35 ns MEMORY CIRCUIT 1 256000 262.144 k ASYNCHRONOUS 28 mA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified 3 85 °C -40 °C 260 40 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm 1623927 TSOP2 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 44 compliant EAR99 8542.32.00.71
MR2A16AYS35
Everspin Technologies
查询价格和库存
Yes Active 4.1943 Mbit 16 256KX16 3.3 V 35 ns MEMORY CIRCUIT 1 256000 262.144 k ASYNCHRONOUS 28 mA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified 3 70 °C 260 NOT SPECIFIED 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm 1623927 TSOP2 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 44 compliant EAR99 8542.32.00.71
24LC04B-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 4.096 kbit 8 512X8 5 V 400 kHz EEPROM 200 1000000 Write/Erase Cycles 1010XXMR 1 1 512 512 words SYNCHRONOUS OPEN-DRAIN SERIAL 5 V I2C 1 µA 3 µA 5.5 V 2.5 V CMOS 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 24LC04B-I/SN 2188 SOIC 8 compliant Thailand EAR99 8542.32.00.51 24.48 1991-01-01
24LC04B/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 4.096 kbit 8 512X8 5 V 400 kHz EEPROM 200 1000000 Write/Erase Cycles 1010XXMR 1 1 512 512 words SYNCHRONOUS OPEN-DRAIN SERIAL 5 V I2C 100 µA 3 µA 5.5 V 4.5 V CMOS COMMERCIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 24LC04B/SN 2188 SOIC 0.150 INCH, PLASTIC, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC46BXT-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC46BXT-I/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
24LC04BT-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 4.096 kbit 8 512X8 5 V 400 kHz EEPROM 200 1000000 Write/Erase Cycles 1010XXMR 1 1 512 512 words SYNCHRONOUS OPEN-DRAIN SERIAL 5 V I2C 1 µA 3 µA 5.5 V 2.5 V CMOS 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 24LC04BT-I/SN 2188 SOIC 8 compliant Thailand EAR99 8542.32.00.51 24.48 1991-01-01
AS4C16M16SA-6TCN
Alliance Memory Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns 166 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 25 mA 60 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 260 40 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
93C46B-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 5 V 3 MHz EEPROM 1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93C46B-I/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 刷新周期
访问模式 内存集成电路类型 其他特性 备用内存宽度 数据保留时间-最小值 耐久性 I/O 类型 I2C控制字节 交错的突发长度 混合内存类型 功能数量 端口数量 字数代码 字数 工作模式 输出特性 并行/串行 编程电压
就绪/忙碌
反向引出线
自我刷新
连续突发长度
串行总线类型
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
切换位
最长写入周期时间 (tWC)
写保护
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别
处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
Source Content uid
mfrid
零件包装代码
包装说明
针数
是否符合REACH标准
Country Of Origin
ECCN代码
HTS代码
YTEOL
Date Of Intro
93LC46BT/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 4.5 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS SERIAL 4.5 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC46BT/SN 2188 SOIC 0.150 INCH, PLASTIC, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 5.9
93LC46BT-I/ST
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm 93LC46BT-I/ST 2188 SOIC TSSOP, TSSOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC46B-I/ST
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm 93LC46B-I/ST 2188 SOIC TSSOP, TSSOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC56BT/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 2.048 kbit 16 128X16 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 128 128 words SYNCHRONOUS SERIAL 3 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC56BT/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 6.1
24LC16B-E/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 16.384 kbit 8 2KX8 5 V 400 kHz EEPROM 200 1000000 Write/Erase Cycles 1010MMMR 1 1 2000 2.048 k SYNCHRONOUS SERIAL 5 V I2C 5 µA 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 125 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 24LC16B-E/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC56B-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 2.048 kbit 16 128X16 5 V 2 MHz EEPROM 8 200 1000000 Write/Erase Cycles 1 1 128 128 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC56B-I/SN 2188 SOIC 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC56B/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 2.048 kbit 16 128X16 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 128 128 words SYNCHRONOUS SERIAL 3 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC56B/SN 2188 SOIC 0.150 INCH, PLASTIC, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 6.1
47C16-I/SN
Microchip Technology Inc
查询价格和库存
Yes Active 16.384 kbit 8 2KX8 5 V 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 2000 2.048 k SYNCHRONOUS 5.5 V 4.5 V CMOS INDUSTRIAL R-PDSO-G8 e3 3 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 47C16-I/SN 2188 SOIC-8 compliant Thailand EAR99 8542.32.00.51 24.48 2016-10-10
93LC46AT/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 8 128X8 4.5 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 128 128 words SYNCHRONOUS SERIAL 4.5 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC46AT/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC66BT/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 4.096 kbit 16 256X16 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS SERIAL 3 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC66BT/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
24LC16B-I/SNG
Microchip Technology Inc
查询价格和库存
Yes Yes Active 16.384 kbit 8 2KX8 5 V 400 kHz EEPROM 1000K ERASE/WRITE CYCLES; CAN BE ORGANIZ... more 200 1000000 Write/Erase Cycles 1010MMMR 1 2000 2.048 k SYNCHRONOUS SERIAL I2C 1 µA 3 µA 5.5 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 3 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.91 mm 24LC16B-I/SNG 2188 SOIC 0.150 INCH, ROHS COMPLIANT, PLASTIC, MS-012, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 6.2
AS4C16M16SA-6TIN
Alliance Memory Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns 166 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 25 mA 60 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 e3 3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
MR2A16ACYS35
Everspin Technologies
查询价格和库存
Yes Yes Active 4.1943 Mbit 16 256KX16 3.3 V 35 ns MEMORY CIRCUIT 1 256000 262.144 k ASYNCHRONOUS 28 mA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified 3 85 °C -40 °C 260 40 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm 1623927 TSOP2 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 44 compliant EAR99 8542.32.00.71
MR2A16AYS35
Everspin Technologies
查询价格和库存
Yes Active 4.1943 Mbit 16 256KX16 3.3 V 35 ns MEMORY CIRCUIT 1 256000 262.144 k ASYNCHRONOUS 28 mA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified 3 70 °C 260 NOT SPECIFIED 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm 1623927 TSOP2 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 44 compliant EAR99 8542.32.00.71
24LC04B-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 4.096 kbit 8 512X8 5 V 400 kHz EEPROM 200 1000000 Write/Erase Cycles 1010XXMR 1 1 512 512 words SYNCHRONOUS OPEN-DRAIN SERIAL 5 V I2C 1 µA 3 µA 5.5 V 2.5 V CMOS 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 24LC04B-I/SN 2188 SOIC 8 compliant Thailand EAR99 8542.32.00.51 24.48 1991-01-01
24LC04B/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 4.096 kbit 8 512X8 5 V 400 kHz EEPROM 200 1000000 Write/Erase Cycles 1010XXMR 1 1 512 512 words SYNCHRONOUS OPEN-DRAIN SERIAL 5 V I2C 100 µA 3 µA 5.5 V 4.5 V CMOS COMMERCIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 24LC04B/SN 2188 SOIC 0.150 INCH, PLASTIC, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 24.48
93LC46BXT-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC46BXT-I/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
24LC04BT-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 4.096 kbit 8 512X8 5 V 400 kHz EEPROM 200 1000000 Write/Erase Cycles 1010XXMR 1 1 512 512 words SYNCHRONOUS OPEN-DRAIN SERIAL 5 V I2C 1 µA 3 µA 5.5 V 2.5 V CMOS 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 24LC04BT-I/SN 2188 SOIC 8 compliant Thailand EAR99 8542.32.00.51 24.48 1991-01-01
AS4C16M16SA-6TCN
Alliance Memory Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns 166 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 25 mA 60 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 260 40 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
93C46B-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 5 V 3 MHz EEPROM 1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93C46B-I/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 24.48
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