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其他内存集成电路:

57,095 个筛选结果
SRAM (540,897)
闪存 (312,420)
DRAM (266,974)
EEPROM (146,536)
FIFO (71,621)
OTP ROM (39,010)
EPROM (21,844)
MASK ROM (10,109)
PROM (70)
型号
最长访问时间 (50)
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最大时钟频率 (fCLK) (49)
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制造商 (50)
内存密度 (50)
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内存宽度 (18)
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组织 (50)
型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 数据保留时间-最小值 耐久性 混合内存类型 功能数量 端口数量 字数代码 字数 工作模式 并行/串行 串行总线类型
最大待机电流
最小待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
最长写入周期时间 (tWC)
写保护
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
mfrid
零件包装代码
包装说明
针数
是否符合REACH标准
ECCN代码
HTS代码
Country Of Origin
YTEOL
Source Content uid
Date Of Intro
制造商包装代码
MR25H10MDF
Everspin Technologies
查询价格和库存
Yes Active 1.0486 Mbit 8 128KX8 3 V MEMORY CIRCUIT 1 128000 131.072 k SYNCHRONOUS 3.6 V 3 V CMOS AUTOMOTIVE R-PDSO-N8 e3 3 125 °C -40 °C 260 30 8 PLASTIC/EPOXY HVSON RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 1.27 mm DUAL 900 µm 6 mm 5 mm 1623927 SON DFN-8 8 compliant EAR99 8542.32.00.71
MR2A16AMA35
Everspin Technologies
查询价格和库存
Yes Active 4.1943 Mbit 16 256KX16 3.3 V 35 ns MEMORY CIRCUIT 1 256000 262.144 k ASYNCHRONOUS 28 mA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B48 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY LFBGA BGA48,6X8,30 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1.35 mm 8 mm 8 mm 1623927 BGA LFBGA, BGA48,6X8,30 48 compliant EAR99 8542.32.00.71
MR2A16AVMA35
Everspin Technologies
查询价格和库存
Yes Active 4.1943 Mbit 16 256KX16 3.3 V 35 ns MEMORY CIRCUIT 1 256000 262.144 k ASYNCHRONOUS 28 mA 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B48 Not Qualified 3 105 °C -40 °C 260 40 48 PLASTIC/EPOXY LFBGA BGA48,6X8,30 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1.35 mm 8 mm 8 mm 1623927 BGA LFBGA, BGA48,6X8,30 48 compliant EAR99 8542.32.00.71
MR4A16BCYS35R
Everspin Technologies
查询价格和库存
Yes Active 16.7772 Mbit 16 1MX16 3.3 V 35 ns MRAM 20 1 1000000 1.0486 M ASYNCHRONOUS PARALLEL 9 mA 3 V 180 µA 3.6 V 3 V CMOS INDUSTRIAL 35 ns R-PDSO-G54 Not Qualified e3 3 85 °C -40 °C 260 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1623927 TSSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 Taiwan 7.5
MR0A16ACMA35
Everspin Technologies
查询价格和库存
Yes Active 1.0486 Mbit 16 64KX16 3.3 V 35 ns MEMORY CIRCUIT 1 64000 65.536 k ASYNCHRONOUS 12 mA 165 µA 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B48 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY LFBGA BGA48,6X8,30 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1.35 mm 8 mm 8 mm 1623927 BGA LFBGA, BGA48,6X8,30 48 compliant EAR99 8542.32.00.71
MR4A16BYS35
Everspin Technologies
查询价格和库存
Yes Active 16.7772 Mbit 16 1MX16 3.3 V 35 ns MRAM 20 1 1000000 1.0486 M ASYNCHRONOUS PARALLEL 9 mA 3 V 180 µA 3.6 V 3 V CMOS COMMERCIAL 35 ns R-PDSO-G54 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1623927 TSSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 Taiwan 6.75
47C16-I/P
Microchip Technology Inc
查询价格和库存
Yes Active 16.384 kbit 8 2KX8 5 V 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 2000 2.048 k SYNCHRONOUS 5.5 V 4.5 V CMOS INDUSTRIAL R-PDIP-T8 e3 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm 2188 DIP-8 compliant EAR99 8542.32.00.51 Thailand 24.48 47C16-I/P 2016-10-10
47C04-I/P
Microchip Technology Inc
查询价格和库存
Yes Active 4.096 kbit 8 512X8 5 V 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 512 512 words SYNCHRONOUS 5.5 V 4.5 V CMOS INDUSTRIAL R-PDIP-T8 e3 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm 2188 DIP-8 compliant EAR99 8542.32.00.51 Thailand 24.48 47C04-I/P 2016-10-10
DS2401P+
Analog Devices Inc
查询价格和库存
Yes Active 64 bit 1 64X1 5 V MEMORY CIRCUIT 1 64 64 words ASYNCHRONOUS 6 V 2.8 V CMOS INDUSTRIAL R-PDSO-C6 Not Qualified e3 1 85 °C -40 °C 260 30 6 PLASTIC/EPOXY SOC SOC6,.17 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) C BEND 1.27 mm DUAL 1.5 mm 3.94 mm 3.76 mm 1742 6-PLCC-N/A TSOC-6 6 compliant Japan, Mainland China, Malaysia, Philipp... more 8.5 DS2401P+ 2002-02-22 6-PLCC-N/A
DS2401Z+
Analog Devices Inc
查询价格和库存
Yes Active 64 bit 1 64X1 5 V MEMORY CIRCUIT 1 64 64 words ASYNCHRONOUS 6 V 2.8 V CMOS INDUSTRIAL R-PDSO-G4 Not Qualified e3 1 85 °C -40 °C 260 30 4 PLASTIC/EPOXY SOP SOT-223 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) - annealed GULL WING 2.3 mm DUAL 1.8 mm 6.5 mm 3.5 mm 1742 3-SOT_223-N/A SOT-223, 4 PIN 3 compliant Japan, Mainland China, Malaysia, Philipp... more 8.5 DS2401Z+ 2002-02-22 3-SOT_223-N/A
MR0A16ACYS35
Everspin Technologies
查询价格和库存
Yes Active 1.0486 Mbit 16 64KX16 3.3 V 35 ns MEMORY CIRCUIT 1 64000 65.536 k ASYNCHRONOUS 28 mA 165 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm 1623927 TSOP2 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 44 compliant EAR99 8542.32.00.71
47C04-E/P
Microchip Technology Inc
查询价格和库存
Yes Active 4.096 kbit 8 512X8 5 V 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 512 512 words SYNCHRONOUS 5.5 V 4.5 V CMOS AUTOMOTIVE R-PDIP-T8 e3 125 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm 2188 DIP-8 compliant EAR99 8542.32.00.51 Thailand 24.48 47C04-E/P 2016-10-10
47C16-E/P
Microchip Technology Inc
查询价格和库存
Yes Active 16.384 kbit 8 2KX8 5 V 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 2000 2.048 k SYNCHRONOUS 5.5 V 4.5 V CMOS AUTOMOTIVE R-PDIP-T8 e3 125 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm 2188 DIP-8 compliant EAR99 8542.32.00.71 Thailand 24.48 47C16-E/P 2016-10-10
47L04-E/P
Microchip Technology Inc
查询价格和库存
Yes Active 4.096 kbit 8 512X8 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 512 512 words SYNCHRONOUS 3.6 V 2.7 V CMOS AUTOMOTIVE R-PDIP-T8 e3 125 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm 2188 DIP-8 compliant EAR99 8542.32.00.51 Thailand 24.48 47L04-E/P 2016-10-10
MR20H40CDF
Everspin Technologies
查询价格和库存
Yes Active 4.1943 Mbit 8 512KX8 3.3 V MEMORY CIRCUIT 1 512000 524.288 k SYNCHRONOUS 750 µA 46.5 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-N8 Not Qualified 3 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 8 PLASTIC/EPOXY HVSON SOLCC8,.25 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES NO LEAD 1.27 mm DUAL 900 µm 6 mm 5 mm 1623927 SON DFN-8 8 compliant EAR99 8542.32.00.71
MB85RS16NPN-G-AMEWE1
FUJITSU Semiconductor Limited
查询价格和库存
Active 16.384 kbit 8 2KX8 3.3 V 20 MHz FRAM DATA RETENTION TIME @ 95 DEGREE CENTIGRADE 10 10000000000 Write/Erase Cycles 1 2000 2.048 k SYNCHRONOUS SERIAL SPI 20 µA 2.7 V 2.4 µA 3.6 V 2.7 V CMOS HARDWARE R-PDSO-N8 3 95 °C -40 °C 8 PLASTIC/EPOXY HVSON SOLCC8,.12,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES NO LEAD 500 µm DUAL 750 µm 3 mm 2 mm 4317229 HVSON, unknown EAR99 8542.32.00.71 5.8
MR0D08BMA45
Everspin Technologies
查询价格和库存
Yes Active 1.0486 Mbit 8 128KX8 3.3 V 45 ns MEMORY CIRCUIT 1 128000 131.072 k ASYNCHRONOUS 8 mA 65 µA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B48 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY LFBGA BGA48,6X8,30 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1.35 mm 8 mm 8 mm 1623927 BGA LFBGA, BGA48,6X8,30 48 compliant EAR99 8542.32.00.71
MR256D08BMA45
Everspin Technologies
查询价格和库存
Yes Active 262.144 kbit 8 32KX8 3.3 V 45 ns MEMORY CIRCUIT 1 32000 32.768 k ASYNCHRONOUS 8 mA 65 µA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B48 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY LFBGA BGA48,6X8,30 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1.35 mm 8 mm 8 mm 1623927 BGA LFBGA, BGA48,6X8,30 48 compliant EAR99 8542.32.00.71
MB85RC1MTPNF-G-JNERE1
FUJITSU Semiconductor Limited
查询价格和库存
Active 1.0486 Mbit 8 128KX8 3.3 V 3.4 MHz FRAM DATA RETENTION TIME @ 85 DEGREE CENTIGRADE 10 10000000000000 Write/Erase Cycles 1 128000 131.072 k SYNCHRONOUS SERIAL I2C 12 µA 1.8 V 1.2 µA 3.6 V 1.8 V CMOS HARDWARE R-PDSO-G8 e6 3 85 °C -40 °C 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Tin/Bismuth (Sn/Bi) GULL WING 1.27 mm DUAL 1.75 mm 5.05 mm 3.9 mm 4317229 SOP, unknown EAR99 8542.32.00.71 5.25
MB85RS512TPNF-G-JNERE1
FUJITSU Semiconductor Limited
查询价格和库存
Active 524.288 kbit 8 64KX8 3.3 V 30 MHz FRAM DATA RETENTION TIME @ 85 DEGREE CENTIGRADE 10 10000000000000 Write/Erase Cycles 1 64000 65.536 k SYNCHRONOUS SERIAL SPI 120 µA 1.8 V 10 µA 3.6 V 1.8 V CMOS HARDWARE R-PDSO-G8 85 °C -40 °C 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES GULL WING 1.27 mm DUAL 1.75 mm 5.05 mm 3.9 mm 4317229 SOP, unknown EAR99 5.7
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 数据保留时间-最小值 耐久性 混合内存类型 功能数量 端口数量 字数代码 字数 工作模式 并行/串行 串行总线类型
最大待机电流
最小待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
最长写入周期时间 (tWC)
写保护
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
mfrid
零件包装代码
包装说明
针数
是否符合REACH标准
ECCN代码
HTS代码
Country Of Origin
YTEOL
Source Content uid
Date Of Intro
制造商包装代码
MR25H10MDF
Everspin Technologies
查询价格和库存
Yes Active 1.0486 Mbit 8 128KX8 3 V MEMORY CIRCUIT 1 128000 131.072 k SYNCHRONOUS 3.6 V 3 V CMOS AUTOMOTIVE R-PDSO-N8 e3 3 125 °C -40 °C 260 30 8 PLASTIC/EPOXY HVSON RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 1.27 mm DUAL 900 µm 6 mm 5 mm 1623927 SON DFN-8 8 compliant EAR99 8542.32.00.71
MR2A16AMA35
Everspin Technologies
查询价格和库存
Yes Active 4.1943 Mbit 16 256KX16 3.3 V 35 ns MEMORY CIRCUIT 1 256000 262.144 k ASYNCHRONOUS 28 mA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B48 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY LFBGA BGA48,6X8,30 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1.35 mm 8 mm 8 mm 1623927 BGA LFBGA, BGA48,6X8,30 48 compliant EAR99 8542.32.00.71
MR2A16AVMA35
Everspin Technologies
查询价格和库存
Yes Active 4.1943 Mbit 16 256KX16 3.3 V 35 ns MEMORY CIRCUIT 1 256000 262.144 k ASYNCHRONOUS 28 mA 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B48 Not Qualified 3 105 °C -40 °C 260 40 48 PLASTIC/EPOXY LFBGA BGA48,6X8,30 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1.35 mm 8 mm 8 mm 1623927 BGA LFBGA, BGA48,6X8,30 48 compliant EAR99 8542.32.00.71
MR4A16BCYS35R
Everspin Technologies
查询价格和库存
Yes Active 16.7772 Mbit 16 1MX16 3.3 V 35 ns MRAM 20 1 1000000 1.0486 M ASYNCHRONOUS PARALLEL 9 mA 3 V 180 µA 3.6 V 3 V CMOS INDUSTRIAL 35 ns R-PDSO-G54 Not Qualified e3 3 85 °C -40 °C 260 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1623927 TSSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 Taiwan 7.5
MR0A16ACMA35
Everspin Technologies
查询价格和库存
Yes Active 1.0486 Mbit 16 64KX16 3.3 V 35 ns MEMORY CIRCUIT 1 64000 65.536 k ASYNCHRONOUS 12 mA 165 µA 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B48 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY LFBGA BGA48,6X8,30 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1.35 mm 8 mm 8 mm 1623927 BGA LFBGA, BGA48,6X8,30 48 compliant EAR99 8542.32.00.71
MR4A16BYS35
Everspin Technologies
查询价格和库存
Yes Active 16.7772 Mbit 16 1MX16 3.3 V 35 ns MRAM 20 1 1000000 1.0486 M ASYNCHRONOUS PARALLEL 9 mA 3 V 180 µA 3.6 V 3 V CMOS COMMERCIAL 35 ns R-PDSO-G54 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1623927 TSSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 Taiwan 6.75
47C16-I/P
Microchip Technology Inc
查询价格和库存
Yes Active 16.384 kbit 8 2KX8 5 V 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 2000 2.048 k SYNCHRONOUS 5.5 V 4.5 V CMOS INDUSTRIAL R-PDIP-T8 e3 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm 2188 DIP-8 compliant EAR99 8542.32.00.51 Thailand 24.48 47C16-I/P 2016-10-10
47C04-I/P
Microchip Technology Inc
查询价格和库存
Yes Active 4.096 kbit 8 512X8 5 V 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 512 512 words SYNCHRONOUS 5.5 V 4.5 V CMOS INDUSTRIAL R-PDIP-T8 e3 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm 2188 DIP-8 compliant EAR99 8542.32.00.51 Thailand 24.48 47C04-I/P 2016-10-10
DS2401P+
Analog Devices Inc
查询价格和库存
Yes Active 64 bit 1 64X1 5 V MEMORY CIRCUIT 1 64 64 words ASYNCHRONOUS 6 V 2.8 V CMOS INDUSTRIAL R-PDSO-C6 Not Qualified e3 1 85 °C -40 °C 260 30 6 PLASTIC/EPOXY SOC SOC6,.17 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) C BEND 1.27 mm DUAL 1.5 mm 3.94 mm 3.76 mm 1742 6-PLCC-N/A TSOC-6 6 compliant Japan, Mainland China, Malaysia, Philipp... more 8.5 DS2401P+ 2002-02-22 6-PLCC-N/A
DS2401Z+
Analog Devices Inc
查询价格和库存
Yes Active 64 bit 1 64X1 5 V MEMORY CIRCUIT 1 64 64 words ASYNCHRONOUS 6 V 2.8 V CMOS INDUSTRIAL R-PDSO-G4 Not Qualified e3 1 85 °C -40 °C 260 30 4 PLASTIC/EPOXY SOP SOT-223 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) - annealed GULL WING 2.3 mm DUAL 1.8 mm 6.5 mm 3.5 mm 1742 3-SOT_223-N/A SOT-223, 4 PIN 3 compliant Japan, Mainland China, Malaysia, Philipp... more 8.5 DS2401Z+ 2002-02-22 3-SOT_223-N/A
MR0A16ACYS35
Everspin Technologies
查询价格和库存
Yes Active 1.0486 Mbit 16 64KX16 3.3 V 35 ns MEMORY CIRCUIT 1 64000 65.536 k ASYNCHRONOUS 28 mA 165 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm 1623927 TSOP2 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 44 compliant EAR99 8542.32.00.71
47C04-E/P
Microchip Technology Inc
查询价格和库存
Yes Active 4.096 kbit 8 512X8 5 V 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 512 512 words SYNCHRONOUS 5.5 V 4.5 V CMOS AUTOMOTIVE R-PDIP-T8 e3 125 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm 2188 DIP-8 compliant EAR99 8542.32.00.51 Thailand 24.48 47C04-E/P 2016-10-10
47C16-E/P
Microchip Technology Inc
查询价格和库存
Yes Active 16.384 kbit 8 2KX8 5 V 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 2000 2.048 k SYNCHRONOUS 5.5 V 4.5 V CMOS AUTOMOTIVE R-PDIP-T8 e3 125 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm 2188 DIP-8 compliant EAR99 8542.32.00.71 Thailand 24.48 47C16-E/P 2016-10-10
47L04-E/P
Microchip Technology Inc
查询价格和库存
Yes Active 4.096 kbit 8 512X8 400 ns MEMORY CIRCUIT EEPROM+SRAM 1 1 512 512 words SYNCHRONOUS 3.6 V 2.7 V CMOS AUTOMOTIVE R-PDIP-T8 e3 125 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm 2188 DIP-8 compliant EAR99 8542.32.00.51 Thailand 24.48 47L04-E/P 2016-10-10
MR20H40CDF
Everspin Technologies
查询价格和库存
Yes Active 4.1943 Mbit 8 512KX8 3.3 V MEMORY CIRCUIT 1 512000 524.288 k SYNCHRONOUS 750 µA 46.5 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-N8 Not Qualified 3 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 8 PLASTIC/EPOXY HVSON SOLCC8,.25 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES NO LEAD 1.27 mm DUAL 900 µm 6 mm 5 mm 1623927 SON DFN-8 8 compliant EAR99 8542.32.00.71
MB85RS16NPN-G-AMEWE1
FUJITSU Semiconductor Limited
查询价格和库存
Active 16.384 kbit 8 2KX8 3.3 V 20 MHz FRAM DATA RETENTION TIME @ 95 DEGREE CENTIGRADE 10 10000000000 Write/Erase Cycles 1 2000 2.048 k SYNCHRONOUS SERIAL SPI 20 µA 2.7 V 2.4 µA 3.6 V 2.7 V CMOS HARDWARE R-PDSO-N8 3 95 °C -40 °C 8 PLASTIC/EPOXY HVSON SOLCC8,.12,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES NO LEAD 500 µm DUAL 750 µm 3 mm 2 mm 4317229 HVSON, unknown EAR99 8542.32.00.71 5.8
MR0D08BMA45
Everspin Technologies
查询价格和库存
Yes Active 1.0486 Mbit 8 128KX8 3.3 V 45 ns MEMORY CIRCUIT 1 128000 131.072 k ASYNCHRONOUS 8 mA 65 µA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B48 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY LFBGA BGA48,6X8,30 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1.35 mm 8 mm 8 mm 1623927 BGA LFBGA, BGA48,6X8,30 48 compliant EAR99 8542.32.00.71
MR256D08BMA45
Everspin Technologies
查询价格和库存
Yes Active 262.144 kbit 8 32KX8 3.3 V 45 ns MEMORY CIRCUIT 1 32000 32.768 k ASYNCHRONOUS 8 mA 65 µA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B48 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY LFBGA BGA48,6X8,30 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1.35 mm 8 mm 8 mm 1623927 BGA LFBGA, BGA48,6X8,30 48 compliant EAR99 8542.32.00.71
MB85RC1MTPNF-G-JNERE1
FUJITSU Semiconductor Limited
查询价格和库存
Active 1.0486 Mbit 8 128KX8 3.3 V 3.4 MHz FRAM DATA RETENTION TIME @ 85 DEGREE CENTIGRADE 10 10000000000000 Write/Erase Cycles 1 128000 131.072 k SYNCHRONOUS SERIAL I2C 12 µA 1.8 V 1.2 µA 3.6 V 1.8 V CMOS HARDWARE R-PDSO-G8 e6 3 85 °C -40 °C 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Tin/Bismuth (Sn/Bi) GULL WING 1.27 mm DUAL 1.75 mm 5.05 mm 3.9 mm 4317229 SOP, unknown EAR99 8542.32.00.71 5.25
MB85RS512TPNF-G-JNERE1
FUJITSU Semiconductor Limited
查询价格和库存
Active 524.288 kbit 8 64KX8 3.3 V 30 MHz FRAM DATA RETENTION TIME @ 85 DEGREE CENTIGRADE 10 10000000000000 Write/Erase Cycles 1 64000 65.536 k SYNCHRONOUS SERIAL SPI 120 µA 1.8 V 10 µA 3.6 V 1.8 V CMOS HARDWARE R-PDSO-G8 85 °C -40 °C 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES GULL WING 1.27 mm DUAL 1.75 mm 5.05 mm 3.9 mm 4317229 SOP, unknown EAR99 5.7
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