型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 |
是否Rohs认证
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生命周期 | 内存密度 | 内存宽度 | 组织 |
标称供电电压 (Vsup)
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最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | 数据保留时间-最小值 | 耐久性 | 混合内存类型 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 并行/串行 |
串行总线类型
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最大待机电流
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最小待机电流
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最大压摆率
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最大供电电压 (Vsup)
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最小供电电压 (Vsup)
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技术 |
温度等级
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最长写入周期时间 (tWC)
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写保护
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JESD-30 代码 |
认证状态
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JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
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端子面层
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端子形式
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端子节距
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端子位置
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座面最大高度
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长度 |
宽度
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mfrid
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零件包装代码
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包装说明
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针数
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是否符合REACH标准
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ECCN代码
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HTS代码
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Country Of Origin
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YTEOL
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Source Content uid
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Date Of Intro
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制造商包装代码
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MR25H10MDF
Everspin Technologies
|
查询价格和库存 |
|
Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 3 V | MEMORY CIRCUIT | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3.6 V | 3 V | CMOS | AUTOMOTIVE | R-PDSO-N8 | e3 | 3 | 125 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | HVSON | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 1.27 mm | DUAL | 900 µm | 6 mm | 5 mm | 1623927 | SON | DFN-8 | 8 | compliant | EAR99 | 8542.32.00.71 | |||||||||||||||||||||||
MR2A16AMA35
Everspin Technologies
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查询价格和库存 |
|
Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 35 ns | MEMORY CIRCUIT | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 28 mA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PBGA-B48 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | LFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.35 mm | 8 mm | 8 mm | 1623927 | BGA | LFBGA, BGA48,6X8,30 | 48 | compliant | EAR99 | 8542.32.00.71 | |||||||||||||||||||||||
MR2A16AVMA35
Everspin Technologies
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查询价格和库存 |
|
Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 35 ns | MEMORY CIRCUIT | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 28 mA | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B48 | Not Qualified | 3 | 105 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | LFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.35 mm | 8 mm | 8 mm | 1623927 | BGA | LFBGA, BGA48,6X8,30 | 48 | compliant | EAR99 | 8542.32.00.71 | |||||||||||||||||||||
MR4A16BCYS35R
Everspin Technologies
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查询价格和库存 |
|
Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 35 ns | MRAM | 20 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 9 mA | 3 V | 180 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | 35 ns | R-PDSO-G54 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1623927 | TSSOP2 | TSOP2, TSOP54,.46,32 | 54 | compliant | EAR99 | Taiwan | 7.5 | ||||||||||||||
MR0A16ACMA35
Everspin Technologies
|
查询价格和库存 |
|
Yes | Active | 1.0486 Mbit | 16 | 64KX16 | 3.3 V | 35 ns | MEMORY CIRCUIT | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 12 mA | 165 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B48 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | LFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.35 mm | 8 mm | 8 mm | 1623927 | BGA | LFBGA, BGA48,6X8,30 | 48 | compliant | EAR99 | 8542.32.00.71 | |||||||||||||||||||||
MR4A16BYS35
Everspin Technologies
|
查询价格和库存 |
|
Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 35 ns | MRAM | 20 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 9 mA | 3 V | 180 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | 35 ns | R-PDSO-G54 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1623927 | TSSOP2 | TSOP2, TSOP54,.46,32 | 54 | compliant | EAR99 | Taiwan | 6.75 | |||||||||||||||||
47C16-I/P
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDIP-T8 | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | 2188 | DIP-8 | compliant | EAR99 | 8542.32.00.51 | Thailand | 24.48 | 47C16-I/P | 2016-10-10 | ||||||||||||||||||||
47C04-I/P
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | 4.096 kbit | 8 | 512X8 | 5 V | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 512 | 512 words | SYNCHRONOUS | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDIP-T8 | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | 2188 | DIP-8 | compliant | EAR99 | 8542.32.00.51 | Thailand | 24.48 | 47C04-I/P | 2016-10-10 | ||||||||||||||||||||
DS2401P+
Analog Devices Inc
|
查询价格和库存 |
|
Yes | Active | 64 bit | 1 | 64X1 | 5 V | MEMORY CIRCUIT | 1 | 64 | 64 words | ASYNCHRONOUS | 6 V | 2.8 V | CMOS | INDUSTRIAL | R-PDSO-C6 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 6 | PLASTIC/EPOXY | SOC | SOC6,.17 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | C BEND | 1.27 mm | DUAL | 1.5 mm | 3.94 mm | 3.76 mm | 1742 | 6-PLCC-N/A | TSOC-6 | 6 | compliant | Japan, Mainland China, Malaysia, Philipp... more | 8.5 | DS2401P+ | 2002-02-22 | 6-PLCC-N/A | ||||||||||||||||||
DS2401Z+
Analog Devices Inc
|
查询价格和库存 |
|
Yes | Active | 64 bit | 1 | 64X1 | 5 V | MEMORY CIRCUIT | 1 | 64 | 64 words | ASYNCHRONOUS | 6 V | 2.8 V | CMOS | INDUSTRIAL | R-PDSO-G4 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 4 | PLASTIC/EPOXY | SOP | SOT-223 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) - annealed | GULL WING | 2.3 mm | DUAL | 1.8 mm | 6.5 mm | 3.5 mm | 1742 | 3-SOT_223-N/A | SOT-223, 4 PIN | 3 | compliant | Japan, Mainland China, Malaysia, Philipp... more | 8.5 | DS2401Z+ | 2002-02-22 | 3-SOT_223-N/A | ||||||||||||||||||
MR0A16ACYS35
Everspin Technologies
|
查询价格和库存 |
|
Yes | Active | 1.0486 Mbit | 16 | 64KX16 | 3.3 V | 35 ns | MEMORY CIRCUIT | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 28 mA | 165 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | 1623927 | TSOP2 | 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 | 44 | compliant | EAR99 | 8542.32.00.71 | |||||||||||||||||||||
47C04-E/P
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | 4.096 kbit | 8 | 512X8 | 5 V | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 512 | 512 words | SYNCHRONOUS | 5.5 V | 4.5 V | CMOS | AUTOMOTIVE | R-PDIP-T8 | e3 | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | 2188 | DIP-8 | compliant | EAR99 | 8542.32.00.51 | Thailand | 24.48 | 47C04-E/P | 2016-10-10 | ||||||||||||||||||||
47C16-E/P
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | 5.5 V | 4.5 V | CMOS | AUTOMOTIVE | R-PDIP-T8 | e3 | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | 2188 | DIP-8 | compliant | EAR99 | 8542.32.00.71 | Thailand | 24.48 | 47C16-E/P | 2016-10-10 | ||||||||||||||||||||
47L04-E/P
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | 4.096 kbit | 8 | 512X8 | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 512 | 512 words | SYNCHRONOUS | 3.6 V | 2.7 V | CMOS | AUTOMOTIVE | R-PDIP-T8 | e3 | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | 2188 | DIP-8 | compliant | EAR99 | 8542.32.00.51 | Thailand | 24.48 | 47L04-E/P | 2016-10-10 | |||||||||||||||||||||
MR20H40CDF
Everspin Technologies
|
查询价格和库存 |
|
Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | MEMORY CIRCUIT | 1 | 512000 | 524.288 k | SYNCHRONOUS | 750 µA | 46.5 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-N8 | Not Qualified | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NO LEAD | 1.27 mm | DUAL | 900 µm | 6 mm | 5 mm | 1623927 | SON | DFN-8 | 8 | compliant | EAR99 | 8542.32.00.71 | |||||||||||||||||||||
MB85RS16NPN-G-AMEWE1
FUJITSU Semiconductor Limited
|
查询价格和库存 |
|
Active | 16.384 kbit | 8 | 2KX8 | 3.3 V | 20 MHz | FRAM | DATA RETENTION TIME @ 95 DEGREE CENTIGRADE | 10 | 10000000000 Write/Erase Cycles | 1 | 2000 | 2.048 k | SYNCHRONOUS | SERIAL | SPI | 20 µA | 2.7 V | 2.4 µA | 3.6 V | 2.7 V | CMOS | HARDWARE | R-PDSO-N8 | 3 | 95 °C | -40 °C | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NO LEAD | 500 µm | DUAL | 750 µm | 3 mm | 2 mm | 4317229 | HVSON, | unknown | EAR99 | 8542.32.00.71 | 5.8 | |||||||||||||||||||
MR0D08BMA45
Everspin Technologies
|
查询价格和库存 |
|
Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 3.3 V | 45 ns | MEMORY CIRCUIT | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 8 mA | 65 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PBGA-B48 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | LFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.35 mm | 8 mm | 8 mm | 1623927 | BGA | LFBGA, BGA48,6X8,30 | 48 | compliant | EAR99 | 8542.32.00.71 | ||||||||||||||||||||||
MR256D08BMA45
Everspin Technologies
|
查询价格和库存 |
|
Yes | Active | 262.144 kbit | 8 | 32KX8 | 3.3 V | 45 ns | MEMORY CIRCUIT | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 8 mA | 65 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PBGA-B48 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | LFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.35 mm | 8 mm | 8 mm | 1623927 | BGA | LFBGA, BGA48,6X8,30 | 48 | compliant | EAR99 | 8542.32.00.71 | ||||||||||||||||||||||
MB85RC1MTPNF-G-JNERE1
FUJITSU Semiconductor Limited
|
查询价格和库存 |
|
Active | 1.0486 Mbit | 8 | 128KX8 | 3.3 V | 3.4 MHz | FRAM | DATA RETENTION TIME @ 85 DEGREE CENTIGRADE | 10 | 10000000000000 Write/Erase Cycles | 1 | 128000 | 131.072 k | SYNCHRONOUS | SERIAL | I2C | 12 µA | 1.8 V | 1.2 µA | 3.6 V | 1.8 V | CMOS | HARDWARE | R-PDSO-G8 | e6 | 3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Bismuth (Sn/Bi) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 5.05 mm | 3.9 mm | 4317229 | SOP, | unknown | EAR99 | 8542.32.00.71 | 5.25 | |||||||||||||||||
MB85RS512TPNF-G-JNERE1
FUJITSU Semiconductor Limited
|
查询价格和库存 |
|
Active | 524.288 kbit | 8 | 64KX8 | 3.3 V | 30 MHz | FRAM | DATA RETENTION TIME @ 85 DEGREE CENTIGRADE | 10 | 10000000000000 Write/Erase Cycles | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | SPI | 120 µA | 1.8 V | 10 µA | 3.6 V | 1.8 V | CMOS | HARDWARE | R-PDSO-G8 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 1.75 mm | 5.05 mm | 3.9 mm | 4317229 | SOP, | unknown | EAR99 | 5.7 |