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DRAM:

266,974 个筛选结果
动态随机存取存储器(Dynamic Random Access Memory,DRAM)是一种半导体存储器,主要的作用原理是利用电容内存储电荷的多寡来代表一个二进制比特(bit)是1还是0。由于在现实中晶体管会有漏电电流的现象,导致电容上所存储的电荷数量并不足以正确的判别数据,而导致数据毁损。因此对于DRAM来说,周期性地充电是一个无可避免的要件。由于这种需要定时刷新的特性,因此被称为“动态”存储器。相对来说,静态存储器(SRAM)只要存入数据后,纵使不刷新也不会丢失记忆。
SRAM (540,897)
闪存 (312,420)
DRAM (266,974)
EEPROM (146,536)
FIFO (71,621)
OTP ROM (39,010)
EPROM (21,844)
MASK ROM (10,109)
PROM (70)
型号 访问模式 (18)
最长访问时间 (50)
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最大时钟频率 (fCLK) (50)
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制造商 (50)
内存密度 (50)
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内存宽度 (26)
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组织 (50)
型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 刷新周期
访问模式 内存集成电路类型 其他特性 I/O 类型 交错的突发长度 功能数量 端口数量 字数代码 字数 工作模式 输出特性 自我刷新
连续突发长度
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别
处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
mfrid
包装说明
是否符合REACH标准
Country Of Origin
ECCN代码
HTS代码
YTEOL
零件包装代码
针数
Date Of Intro
IS42S16320F-7TL-TR
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 536.8709 Mbit 16 32MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 70 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
AS4C4M32S-7BCN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 134.2177 Mbit 32 4MX32 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PBGA-B90 3 70 °C 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm 1689 8 X 13 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-90 compliant Taiwan EAR99 8542.32.00.02 4 BGA 90
W949D2CBJX5E
Winbond Electronics Corp
查询价格和库存
Yes Active 536.8709 Mbit 32 16MX32 1.8 V 5 ns 200 MHz 8192 FOUR BANK PAGE BURST LPDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8,16 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 2,4,8,16 10 µA 75 µA 1.95 V 1.7 V CMOS OTHER R-PBGA-B90 Not Qualified 85 °C -25 °C NOT SPECIFIED NOT SPECIFIED 90 PLASTIC/EPOXY TFBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.025 mm 13 mm 8 mm 2558 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 compliant EAR99 8542.32.00.28 4.65 BGA 90
MT48LC4M16A2P-6A:J
Micron Technology Inc
查询价格和库存
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns 167 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 150 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 30 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 compliant 4
AS4C4M16SA-7TCNTR
Alliance Memory Inc
查询价格和库存
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4 2018-10-04
IS43DR16640C-25DBLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 1.0737 Gbit 16 64MX16 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 25 mA 280 µA 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B84 Not Qualified e1 3 85 °C -40 °C 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 2070 TFBGA, BGA84,9X15,32 compliant Mainland China, Taiwan EAR99 8542.32.00.32 4.75
MT41J128M16JT-125:K
Micron Technology Inc
查询价格和库存
Yes Yes Active 2.1475 Gbit 16 128MX16 1.5 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 202 µA 1.575 V 1.425 V CMOS OTHER R-PBGA-B96 Not Qualified e1 3 85 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 TFBGA, BGA96,9X16,32 compliant EAR99 8542.32.00.36 5 BGA 96
AS4C16M16SA-6TAN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 3 105 °C -40 °C AEC-Q100 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
IS42S16800F-6BLI
Integrated Silicon Solution Inc
查询价格和库存
Yes End Of Life 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 166 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 120 µA 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 Not Qualified 85 °C -40 °C 54 PLASTIC/EPOXY TFBGA BGA54,9X9,32 SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 TFBGA-54 compliant Mainland China, Taiwan EAR99 8542.32.00.02 0.89 BGA 54
IS45S16160J-6BLA1-TR
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 166 MHz FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 100 µA 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TFBGA SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 TFBGA, compliant Mainland China, Taiwan EAR99 8542.32.00.24 4
IS43TR16256BL-107MBLI
Integrated Silicon Solution Inc
查询价格和库存
Active 4.295 Gbit 16 256MX16 1.35 V MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH 1 1 256000000 268.4355 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS INDUSTRIAL R-PBGA-B96 e1 3 95 °C -40 °C 260 30 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 9 mm 2070 TFBGA, unknown Mainland China, Taiwan EAR99 8542.32.00.36 5
IS43R86400F-5TL
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 536.8709 Mbit 8 64MX8 2.5 V 700 ps FOUR BANK PAGE BURST DDR1 DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 64000000 67.1089 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS COMMERCIAL R-PDSO-G66 70 °C NOT SPECIFIED NOT SPECIFIED 66 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, compliant Mainland China, Taiwan EAR99 8542.32.00.28 4.25
IS43R86400F-5TLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 536.8709 Mbit 8 64MX8 2.5 V 700 ps FOUR BANK PAGE BURST DDR1 DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 64000000 67.1089 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS INDUSTRIAL R-PDSO-G66 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 66 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, compliant Mainland China, Taiwan EAR99 8542.32.00.28 4.25
MT46V32M16P-5B:J
Micron Technology Inc
查询价格和库存
Yes Yes Active 536.8709 Mbit 16 32MX16 2.6 V 700 ps 200 MHz 8192 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 2,4,8 5 mA 230 µA 2.7 V 2.5 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified e3 3 70 °C 260 30 66 PLASTIC/EPOXY TSSOP TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 TSSOP, TSSOP66,.46 compliant EAR99 8542.32.00.28 4.25 TSOP 66
IS43DR16640C-25DBL
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 1.0737 Gbit 16 64MX16 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 25 mA 280 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 3 85 °C 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 2070 TFBGA, BGA84,9X15,32 compliant Mainland China, Taiwan EAR99 8542.32.00.32 4.75
IS42S16800F-6BL
Integrated Silicon Solution Inc
查询价格和库存
Yes End Of Life 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 166 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 120 µA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B54 Not Qualified 70 °C 54 PLASTIC/EPOXY TFBGA BGA54,9X9,32 SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 TFBGA, BGA54,9X9,32 compliant Mainland China, Taiwan EAR99 8542.32.00.02 0.89 BGA 54
IS42S16320F-7TL
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 536.8709 Mbit 16 32MX16 3.3 V 5.4 ns 143 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 4 mA 160 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, TSOP54,.46,32 compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
MT48LC64M8A2P-75IT:C
Alliance Memory Inc
查询价格和库存
Active 536.8709 Mbit 8 64MX8 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 64000000 67.1089 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 e3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2, compliant EAR99 8542.32.00.28 4
AS4C512M16D3LA-10BCN
Alliance Memory Inc
查询价格和库存
Yes Active 8.5899 Gbit 16 512MX16 1.35 V MULTI BANK PAGE BURST DDR DRAM MODULE AUTO/SELF REFRESH 1 1 512000000 536.8709 M SYNCHRONOUS YES 1.425 V 1.275 V CMOS OTHER R-PBGA-B96 3 95 °C 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13.5 mm 9 mm 1689 FBGA-96 compliant Taiwan EAR99 8542.32.00.36 5.15 2019-03-07
IS42S16800F-7BLI
Integrated Silicon Solution Inc
查询价格和库存
Yes End Of Life 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 100 µA 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 Not Qualified 85 °C -40 °C 54 PLASTIC/EPOXY TFBGA BGA54,9X9,32 SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 TFBGA, BGA54,9X9,32 compliant Mainland China, Taiwan EAR99 8542.32.00.02 0.89 BGA 54
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 刷新周期
访问模式 内存集成电路类型 其他特性 I/O 类型 交错的突发长度 功能数量 端口数量 字数代码 字数 工作模式 输出特性 自我刷新
连续突发长度
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别
处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
mfrid
包装说明
是否符合REACH标准
Country Of Origin
ECCN代码
HTS代码
YTEOL
零件包装代码
针数
Date Of Intro
IS42S16320F-7TL-TR
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 536.8709 Mbit 16 32MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 70 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
AS4C4M32S-7BCN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 134.2177 Mbit 32 4MX32 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PBGA-B90 3 70 °C 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm 1689 8 X 13 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-90 compliant Taiwan EAR99 8542.32.00.02 4 BGA 90
W949D2CBJX5E
Winbond Electronics Corp
查询价格和库存
Yes Active 536.8709 Mbit 32 16MX32 1.8 V 5 ns 200 MHz 8192 FOUR BANK PAGE BURST LPDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8,16 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 2,4,8,16 10 µA 75 µA 1.95 V 1.7 V CMOS OTHER R-PBGA-B90 Not Qualified 85 °C -25 °C NOT SPECIFIED NOT SPECIFIED 90 PLASTIC/EPOXY TFBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.025 mm 13 mm 8 mm 2558 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 compliant EAR99 8542.32.00.28 4.65 BGA 90
MT48LC4M16A2P-6A:J
Micron Technology Inc
查询价格和库存
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns 167 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 150 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 30 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 compliant 4
AS4C4M16SA-7TCNTR
Alliance Memory Inc
查询价格和库存
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4 2018-10-04
IS43DR16640C-25DBLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 1.0737 Gbit 16 64MX16 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 25 mA 280 µA 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B84 Not Qualified e1 3 85 °C -40 °C 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 2070 TFBGA, BGA84,9X15,32 compliant Mainland China, Taiwan EAR99 8542.32.00.32 4.75
MT41J128M16JT-125:K
Micron Technology Inc
查询价格和库存
Yes Yes Active 2.1475 Gbit 16 128MX16 1.5 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 202 µA 1.575 V 1.425 V CMOS OTHER R-PBGA-B96 Not Qualified e1 3 85 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 TFBGA, BGA96,9X16,32 compliant EAR99 8542.32.00.36 5 BGA 96
AS4C16M16SA-6TAN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 3 105 °C -40 °C AEC-Q100 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
IS42S16800F-6BLI
Integrated Silicon Solution Inc
查询价格和库存
Yes End Of Life 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 166 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 120 µA 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 Not Qualified 85 °C -40 °C 54 PLASTIC/EPOXY TFBGA BGA54,9X9,32 SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 TFBGA-54 compliant Mainland China, Taiwan EAR99 8542.32.00.02 0.89 BGA 54
IS45S16160J-6BLA1-TR
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 166 MHz FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 100 µA 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TFBGA SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 TFBGA, compliant Mainland China, Taiwan EAR99 8542.32.00.24 4
IS43TR16256BL-107MBLI
Integrated Silicon Solution Inc
查询价格和库存
Active 4.295 Gbit 16 256MX16 1.35 V MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH 1 1 256000000 268.4355 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS INDUSTRIAL R-PBGA-B96 e1 3 95 °C -40 °C 260 30 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 9 mm 2070 TFBGA, unknown Mainland China, Taiwan EAR99 8542.32.00.36 5
IS43R86400F-5TL
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 536.8709 Mbit 8 64MX8 2.5 V 700 ps FOUR BANK PAGE BURST DDR1 DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 64000000 67.1089 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS COMMERCIAL R-PDSO-G66 70 °C NOT SPECIFIED NOT SPECIFIED 66 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, compliant Mainland China, Taiwan EAR99 8542.32.00.28 4.25
IS43R86400F-5TLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 536.8709 Mbit 8 64MX8 2.5 V 700 ps FOUR BANK PAGE BURST DDR1 DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 64000000 67.1089 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS INDUSTRIAL R-PDSO-G66 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 66 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, compliant Mainland China, Taiwan EAR99 8542.32.00.28 4.25
MT46V32M16P-5B:J
Micron Technology Inc
查询价格和库存
Yes Yes Active 536.8709 Mbit 16 32MX16 2.6 V 700 ps 200 MHz 8192 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 2,4,8 5 mA 230 µA 2.7 V 2.5 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified e3 3 70 °C 260 30 66 PLASTIC/EPOXY TSSOP TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 TSSOP, TSSOP66,.46 compliant EAR99 8542.32.00.28 4.25 TSOP 66
IS43DR16640C-25DBL
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 1.0737 Gbit 16 64MX16 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 25 mA 280 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 3 85 °C 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 2070 TFBGA, BGA84,9X15,32 compliant Mainland China, Taiwan EAR99 8542.32.00.32 4.75
IS42S16800F-6BL
Integrated Silicon Solution Inc
查询价格和库存
Yes End Of Life 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 166 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 120 µA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B54 Not Qualified 70 °C 54 PLASTIC/EPOXY TFBGA BGA54,9X9,32 SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 TFBGA, BGA54,9X9,32 compliant Mainland China, Taiwan EAR99 8542.32.00.02 0.89 BGA 54
IS42S16320F-7TL
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 536.8709 Mbit 16 32MX16 3.3 V 5.4 ns 143 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 4 mA 160 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, TSOP54,.46,32 compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
MT48LC64M8A2P-75IT:C
Alliance Memory Inc
查询价格和库存
Active 536.8709 Mbit 8 64MX8 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 64000000 67.1089 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 e3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2, compliant EAR99 8542.32.00.28 4
AS4C512M16D3LA-10BCN
Alliance Memory Inc
查询价格和库存
Yes Active 8.5899 Gbit 16 512MX16 1.35 V MULTI BANK PAGE BURST DDR DRAM MODULE AUTO/SELF REFRESH 1 1 512000000 536.8709 M SYNCHRONOUS YES 1.425 V 1.275 V CMOS OTHER R-PBGA-B96 3 95 °C 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13.5 mm 9 mm 1689 FBGA-96 compliant Taiwan EAR99 8542.32.00.36 5.15 2019-03-07
IS42S16800F-7BLI
Integrated Silicon Solution Inc
查询价格和库存
Yes End Of Life 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 100 µA 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 Not Qualified 85 °C -40 °C 54 PLASTIC/EPOXY TFBGA BGA54,9X9,32 SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 TFBGA, BGA54,9X9,32 compliant Mainland China, Taiwan EAR99 8542.32.00.02 0.89 BGA 54
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